Systems and methods for reducing high order hall plate sensitivity temperature coefficients

ABSTRACT

The systems and methods described can reduce high order temperature coefficients on the Hall plate sensitivity. A temperature coefficient circuit may include a first amplifier to receive a first reference voltage generated in conjunction with a proportional to absolute temperature (PTAT) device and a second amplifier to receive a second reference voltage generated in conjunction with a complementary to absolute temperature (CTAT) device, the second amplifier having a second output node. A plurality of resistors may be disposed in a signal path between output node of the first amplifier and an output node of the second amplifier. The plurality of resistors may be coupled to at least one voltage-to-current converter through one or more resistors taps. The voltage-to-current converter may generate at least one current signal that can be operable to apply a multiplication factor or a division divisor to an amplifier coupled to the voltage-to-current converter.

FIELD OF THE INVENTION

This invention relates generally to magnetic field sensors, and, more particularly, to a magnetic field sensor having an electronic circuit for compensating for a Hall plate sensitivity of a Hall effect element due to a stress of a substrate on which the Hall effect element and electronic circuit are disposed.

BACKGROUND

Hall effect elements are known. A typical planar or horizontal Hall effect element is a four terminal device for which a drive current (a DC current) is passed between two opposing ones of the four terminals and a differential voltage (AC or DC), responsive to a magnetic field (AC or DC), is generated between the other two opposing ones of the four terminals. An amplitude of the differential signal (i.e., voltage) is related an amplitude of the drive current. Thus, a sensitivity (e.g., mV per Gauss) of the differential signal is related to the amplitude of the drive current.

The Hall effect element can be used in current spinning or chopping arrangements in order to reduce a DC offset from the Hall effect element, which is typified by a non-zero output voltage from the Hall effect element even when experiencing a zero magnetic field. With current spinning or chopping, the terminals used to pass the drive current and the terminals used to generate the differential signal can be changed at a current spinning rate in a periodic and cyclic manner. There can be two such changes per cycle with two-phase current spinning or four such changes with four-phase current spinning.

In order to maintain a constant and stable sensitivity, the drive current can be generated with a stable current source or a current sink that uses a stable reference voltage. However, various parameters can cause the sensitivity to magnetic fields of the differential signal to change.

In general, even with a perfectly stable drive current, the Hall effect element itself can experience sensitivity changes. The changes in sensitivity of the Hall effect element can result directly from temperature changes. In order to correct for this sensitivity change, temperature can be sensed and the changes in sensitivity with temperature can be corrected.

However, the changes in sensitivity of the differential signal can also result from stresses upon a substrate on which the Hall effect element is disposed. The stresses may or may not be related to temperature and also may or may not be related to a thermal coefficient of a material of a package used to seal the substrate. The stresses and resulting changes in sensitivity may vary from unit to unit in different ways with respect to temperature.

SUMMARY

The systems and methods described herein reduce high order temperature coefficients on a Hall plate sensitivity. The high order temperature coefficients can be reduced to provide an output that a segment processor (e.g., digitally controlled segment processor), coupled to the circuitry, can properly process and compensate if necessary, thus improving the operation of the digitally controlled segment processor. For example, in some embodiments, a sensitivity temperature coefficient of a Hall effect element may be too large for the processor to properly compensate. Thus, the high order temperature coefficients (e.g., the strong negative temperature coefficient) can be reduced using specifically designed circuits that generate and provide reference voltages to an amplifier coupled to the Hall effect element.

In an embodiment, first order and/or a second order sensitivity temperature coefficients may be reduced using generated voltage references applied as currents on an amplifier. A temperate coefficient circuit may generate one or more reference voltages, such as a multiplication reference voltage and a division reference voltage, and convert them into currents, such as a multiplication reference current and a division reference current (e.g., I_(mul) and I_(div)). The multiplication reference current and division reference current may be provided to an input of the amplifier to compensate for the high order temperature coefficients of a Hall effect element.

In an embodiment, the multiplication reference voltage may be a numerator term (e.g., voltage temperature coefficient numerator (VTCN)) and may be multiplied by a Hall plate sensitivity to reduce to first order temperature coefficient. The division reference voltage may be a denominator term (e.g., voltage temperature coefficient denominator (VTCD)) and be divided by the Hall plate sensitivity to reduce to a second order temperature coefficient. Thus, by selecting appropriate numerator and/or denominator terms, the first and/or second order sensitivity temperature coefficient can be reduced. In an embodiment, the appropriate numerator and/or denominator terms may be selected to reduce a sensitivity variation with temperature of the Hall plate sensitivity.

In a first aspect, a circuit is provided comprising a semiconductor substrate, an epitaxial layer disposed over a surface of the semiconductor substrate, a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer disposed over the surface of the semiconductor substrate and a current generator configured to generate a drive current that passes through the Hall effect element.

The current generator comprises a first resistor for receiving a reference voltage resulting in a reference current passing through the first resistor, the reference current related to the drive current, the first resistor disposed in the epitaxial layer. In an embodiment, a resistance of the first resistor, the reference current, and the drive current may change in accordance with changes of a stress in the semiconductor substrate. The current generator further comprises an amplifier coupled to the Hall effect element, the amplifier to receive a sensitivity signal from Hall effect element, the sensitivity signal having a first temperature coefficient, the amplifier to generate a compensated sensitivity signal, the compensated sensitivity signal having a second temperature coefficient; and

A temperature compensation circuit may be coupled to the amplifier. The temperature compensation circuit may generate a multiplication reference current and provide the multiplication reference current to the amplifier. In an embodiment, the amplifier can apply the multiplication reference current to the amplifier to generate the compensated sensitivity signal with the second temperature coefficient smaller than the first temperature coefficient of the sensitivity signal.

In some embodiments, the first resistor may comprise a vertical epitaxial resistor. The first temperature coefficient may include a 1^(st) order temperature coefficient, a 2^(nd) order temperature coefficient, or both.

In some embodiments, the amplifier may include a front end amplifier comprised of a Gilbert cell. The Gilbert cell may be coupled to receive the multiplication reference current to apply a multiplication factor to the amplifier. The Hall effect element may include a horizontal Hall effect element.

In some embodiments, the first resistor can be coupled to a second amplifier to form a current source or a current sink. A current mirror may be coupled to the second amplifier. The current mirror may include a reference leg though which the reference current passes, and a drive leg through which the drive current passes. In an embodiment, the drive current passes through the Hall effect element passes between a higher voltage terminal of the Hall effect element and a lower voltage terminal of the Hall effect element. The drive leg of the current mirror may be coupled to the higher voltage terminal. The drive leg of the current mirror can be coupled to the lower voltage terminal.

In some embodiments, the first resistor may include first and second pickups implanted upon and diffused into a first surface of the epitaxial layer and a first buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups. The first buried structure may have a density of atoms that results in a first low resistance path with a first resistance lower than a resistance of the epitaxial layer. The reference current can pass from the first pickup, through a first region of the epitaxial layer, through the first buried structure, and through a second region of the epitaxial layer to the second pickup.

In some embodiments, the current generator includes a second resistor having an orthogonal orientation with respect to the first resistor. The second resistor can be coupled in series or in parallel with the first resistor, the second resistor disposed in the epitaxial layer. The second resistor may include third and fourth pickups implanted upon and diffused into the first surface of the epitaxial layer and a second buried structure disposed under the first surface of the epitaxial layer and under the third and fourth pickups. The second buried structure can have a density of atoms that results in a second low resistance path with a second resistance lower than the resistance of the epitaxial layer, wherein at least a portion of the reference current passes from the third pickup, through a third region of the epitaxial layer, through the second buried structure, and through a fourth region of the epitaxial layer to the fourth pickup.

In another aspect, a circuit is provide comprising a semiconductor substrate, an epitaxial layer disposed over a surface of the semiconductor substrate, a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer disposed over the surface of the semiconductor substrate and a current generator configured to generate a drive current that passes through the Hall effect element.

In some embodiments, the current generator comprises a first resistor for receiving a reference voltage resulting in a reference current passing through the first resistor. The reference current can be related to the drive current, the first resistor disposed in the epitaxial layer, wherein a resistance of the first resistor, the reference current, and the drive current change in accordance with changes of a stress in the semiconductor substrate.

In some embodiments, the current generator further comprises an amplifier coupled to the Hall effect element. The amplifier can receive a sensitivity signal from Hall effect element, the sensitivity signal having a first temperature coefficient, the amplifier to generate a compensated sensitivity signal, the compensated sensitivity signal having a second temperature coefficient. The current generator may further comprise a temperature compensation circuit coupled to the amplifier. The temperature compensation circuit can generate a multiplication reference current and a division reference current and provide the multiplication reference current and the division reference current to the amplifier to the amplifier. In an embodiment, the amplifier applies the multiplication reference current and the division reference current to the amplifier to generate the compensated sensitivity signal with the second temperature coefficient smaller than the first temperature coefficient of the sensitivity signal.

In some embodiments, the first resistor can include a vertical epitaxial resistor. The first portion of the temperature coefficient may include a 1^(st) order temperature coefficient of the Hall effect element and the second portion of the temperature coefficient can be a 2^(nd) order temperature coefficient of the Hall effect element.

In some embodiments, the amplifier may include a front end amplifier comprised of a Gilbert cell. The Gilbert cell can be coupled to receive the multiplication reference current to apply a multiplication factor to the amplifier. The Hall effect element may include a horizontal Hall effect element.

In some embodiments, the first resistor can be coupled to a second amplifier to form a current source or a current sink. A current mirror can be coupled to the second amplifier. The current mirror may include a reference leg though which the reference current passes, and a drive leg through which the drive current passes. The drive current passing through the Hall effect element passes between a higher voltage terminal of the Hall effect element and a lower voltage terminal of the Hall effect element. The drive leg of the current mirror can be coupled to the higher voltage terminal. In some embodiments, the drive leg of the current mirror can be coupled to the lower voltage terminal.

In some embodiments, the first resistor may include first and second pickups implanted upon and diffused into a first surface of the epitaxial layer and a first buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups. The first buried structure can have a density of atoms that results in a first low resistance path with a first resistance lower than a resistance of the epitaxial layer. The reference current passes from the first pickup, through a first region of the epitaxial layer, through the first buried structure, and through a second region of the epitaxial layer to the second pickup.

In some embodiments, the current generator may include a second resistor having an orthogonal orientation with respect to the first resistor. The second resistor can be coupled in series or in parallel with the first resistor, the second resistor disposed in the epitaxial layer. The second resistor may include third and fourth pickups implanted upon and diffused into the first surface of the epitaxial layer and a second buried structure disposed under the first surface of the epitaxial layer and under the third and fourth pickups. The second buried structure can have a density of atoms that results in a second low resistance path with a second resistance lower than the resistance of the epitaxial layer. In an embodiment, at least a portion of the reference current passes from the third pickup, through a third region of the epitaxial layer, through the second buried structure, and through a fourth region of the epitaxial layer to the fourth pickup. In some embodiments, a first length dimension of the first buried structure can be disposed parallel to a first edge of the Hall effect element and proximate to the Hall effect element and a second length dimension of the second buried structure can be disposed parallel to a second edge of the Hall effect element and proximate to the Hall effect element. The second length dimension of the second buried structure can be arranged perpendicular to the first length dimension of the first buried structure.

In another aspect, a circuit is provided comprising a first amplifier to receive a first reference voltage generated in conjunction with a proportional to absolute temperature (PTAT) device, the first amplifier having a first output node. The circuit may further include a second amplifier to receive a second reference voltage generated in conjunction with a complementary to absolute temperature (CTAT) device. In an embodiment, the second reference voltage (CTAT) may have an opposite temperature coefficient with respect to the first reference voltage (PTAT). The second amplifier can have a second output node, a plurality of resistors disposed in a signal path between the first output node and the second output node, the plurality of resistors having at least one resistor tap, at least one voltage-to-current converter coupled to the at least one resistor tap, the at least one voltage-to-current converter to generate a respective at least one current signal and a third amplifier, the third amplifier having a Gilbert cell coupled to the at least one current signal, the at least one current signal operable to apply a multiplication factor or a division divisor to the Gilbert cell.

In some embodiments, the at least one resistor tap includes a plurality of resistor taps. The at least one voltage-to-current converter may include a plurality of voltage-to-current converters.

In some embodiments, the circuit further includes a multiplexer coupled between the plurality of resistors and the plurality of voltage-to-current converters. The multiplexer can have a plurality of input nodes coupled to the plurality of resistor taps, the plurality of multiplexers having a plurality of output nodes. The multiplexer can receive one or more voltages from the plurality of resistor taps and generate a multiplication reference voltage related to the multiplication factor and a division reference voltage related to the division divisor.

In some embodiments, the first reference voltage can be coupled to a noninverting terminal of the first amplifier. The second reference voltage can be coupled to a noninverting terminal of the second amplifier.

In some embodiments, the multiplexer may include a first multiplexer having one or more input nodes coupled to the plurality of resistors and a second multiplexer having one or more inputs coupled to the plurality of resistors. In an embodiment, the first multiplexer may receive one or more voltages from the plurality of resistors and generates the multiplication reference voltage and the second multiplexer may receive one or more voltages from the plurality of resistors and generates the division reference voltage.

In some embodiments, a first converter may be coupled to the multiplexer. The first converter may receive the multiplication reference voltage and generate a multiplication reference current. The first reference voltage can have a predetermined non-zero sensitivity to temperature. The second reference voltage can be insensitive to a change in temperature. In an embodiment, the first and second amplifiers may include respective noninverting operational amplifiers.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing concepts and features may be more fully understood from the following description of the drawings. The drawings aid in explaining and understanding the disclosed technology. Since it is often impractical or impossible to illustrate and describe every possible embodiment, the provided figures depict one or more illustrative embodiments. Accordingly, the figures are not intended to limit the scope of the concepts, systems and techniques described herein. Like numbers in the figures denote like elements.

FIG. 1 is a block diagram of an electronic circuit, having a Hall effect element, and a temperature compensation circuit coupled to an amplifier;

FIG. 2 is a block diagram of an electronic circuit, having a Hall effect element, and driven with a current generator, the electronic circuit and a temperature compensation circuit coupled to an amplifier;

FIG. 2A is a block diagram showing a top view of a substrate having a Hall effect element and a resistor formed thereon;

FIG. 3 is a block diagram of an electronic circuit, having a Hall effect element, and driven with a current generator, the electronic circuit and a temperature compensation circuit coupled to an amplifier;

FIG. 4 is a plot of the sensitivity of a Hall effect element;

FIG. 5 is a plot of the sensitivity of a Hall effect element compensated with a first voltage reference;

FIG. 6 is a circuit diagram of a temperature compensation circuit; and

FIG. 7 is a plot of the sensitivity of a Hall effect element compensated with a first and second voltage references.

DETAILED DESCRIPTION

As used herein, the term “magnetic field sensing element” is used to describe a variety of electronic elements that can sense a magnetic field. The magnetic field sensing element can be, but is not limited to, a Hall effect element, a magnetoresistance element, or a magnetotransistor.

As is known, there are different types of Hall effect elements, for example, a planar Hall element, a vertical Hall element, and a Circular Vertical Hall (CVH) element. As is also known, there are different types of magnetoresistance elements, for example, a semiconductor magnetoresistance element such as Indium Antimonide (InSb), a giant magnetoresistance (GMR) element, for example, a spin valve, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, and a magnetic tunnel junction (MTJ). The magnetic field sensing element may be a single element or, alternatively, may include two or more magnetic field sensing elements arranged in various configurations, e.g., a half bridge or full (Wheatstone) bridge. Depending on the device type and other application requirements, the magnetic field sensing element may be a device made of a type IV semiconductor material such as Silicon (Si) or Germanium (Ge), or a type III-V semiconductor material like Gallium-Arsenide (GaAs) or an Indium compound, e.g., Indium-Antimonide (InSb).

As is known, some of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity parallel to a substrate that supports the magnetic field sensing element, and others of the above-described magnetic field sensing elements tend to have an axis of maximum sensitivity perpendicular to a substrate that supports the magnetic field sensing element. In particular, planar Hall elements tend to have axes of sensitivity perpendicular to a substrate, while metal based or metallic magnetoresistance elements (e.g., GMR, TMR, AMR) and vertical Hall elements tend to have axes of sensitivity parallel to a substrate.

As used herein, the term “magnetic field sensor” is used to describe a circuit that uses a magnetic field sensing element, generally in combination with other circuits. Magnetic field sensors are used in a variety of applications, including, but not limited to, an angle sensor that senses an angle of a direction of a magnetic field, a current sensor that senses a magnetic field generated by a current carried by a current-carrying conductor, a magnetic switch that senses the proximity of a ferromagnetic object, a rotation detector that senses passing ferromagnetic articles, for example, magnetic domains of a ring magnet or a ferromagnetic target (e.g., gear teeth) where the magnetic field sensor is used in combination with a back-biased or other magnet, and a magnetic field sensor that senses a magnetic field density of a magnetic field.

As used herein, the term “predetermined,” when referring to a value or signal, is used to refer to a value or signal that is set, or fixed, in the factory at the time of manufacture, or by external means, e.g., programming, thereafter. As used herein, the term “determined,” when referring to a value or signal, is used to refer to a value or signal that is identified by a circuit during operation, after manufacture.

As used herein, the term “active electronic component” is used to describe an electronic component that has at least one p-n junction. A transistor, a diode, and a logic gate are examples of active electronic components. In contrast, as used herein, the term “passive electronic component” as used to describe an electronic component that does not have at least one p-n junction. A capacitor and a resistor are examples of passive electronic components.

The terms “parallel” and “perpendicular” may be used in various contexts herein. It should be understood that the terms parallel and perpendicular do not require exact perpendicularity or exact parallelism, but instead it is intended that normal manufacturing tolerances apply, which tolerances depend upon the context in which the terms are used. In some instances, the term “substantially” is used to modify the terms “parallel” or “perpendicular.” In general, use of the term “substantially” reflects angles that are beyond manufacturing tolerances, for example, within +/− ten degrees.

As used herein, the term “current generator” is used to describe either a current source or a current sink. It should be understood that a current source has a current output and a current sink has a current input, with a high output or input impedance, respectively.

As used herein, the term “current passing terminal” is used to describe a terminal of an active or passive electronic component that either receives a current or out of which a current comes. Thus, it will be appreciated that both a collector and emitter of a bipolar junction transistor (BJT) are current passing terminals. It will also be appreciated that both a source and a drain of the field effect transistor (FET) are current passing terminals.

As used herein, the term “substrate” is used to describe any type of structure with a flat surface upon which semiconductor materials can be deposited and/or into which semiconductor materials can be implanted and diffused. In some embodiments, the substrate is a P-type silicon substrate having a particular range of concentrations of P-type atoms (i.e., ions)

As used herein, the term “epi” is used to refer to an epitaxial layer, for example, an N-type epitaxial layer, disposed over a substrate, for example, a P-type substrate, and having a particular range of concentrations of N-type atoms (i.e. ions).

As used herein, the term “N+” or “NP” is used to refer to a region implanted and diffused into a semiconductor layer, for example, into a surface of the epitaxial layer furthest from the substrate, and having another particular range of concentrations of N-type atoms (i.e. ions).

As used herein, the term “Light-N” or simply “LN” is used to refer to a region implanted and diffused into a semiconductor layer, for example, into a surface of the epitaxial layer further from the substrate, and having a particular range of concentrations of N-type atoms (i.e. ions).

As used herein, the term “P-well” is used to refer to a region implanted and diffused into a semiconductor layer, for example, into a surface of the epitaxial layer further from the substrate, and having a particular range of concentrations of P-type atoms (i.e. ions).

As used herein, the term “P-type buried layer” or simply “PBL” is used to refer to a region implanted and diffused into a semiconductor layer, for example, implanted into the substrate and then upwardly diffused into the epitaxial (epi) layer (also referred to herein as an epi layer). The epi layer can be grown after PBL implant and diffusion steps, and the upward diffusion into epi layer can be performed during a field oxidation process.

As used herein, the term “N-type buried layer” or simply “NBL” is used to refer to a region implanted and diffused into a semiconductor layer, for example, implanted into the substrate and then upwardly diffused into the epitaxial (epi) layer. The epi layer can be grown after NBL implant and diffusion steps, and the upward diffusion into epi layer can be performed during a field oxidation process.

As used herein, the term “P+” or “PP” is used to refer to a region implanted and diffused into a semiconductor layer, for example, into a surface of the epitaxial layer furthest from the substrate, and having another particular range of concentrations of P-type atoms (i.e. ions).

As used herein, the concentrations of the above types of semiconductor structures can fall into the following ranges:

-   -   substrate=about 1×1015 P-type atoms per cm3, for example, boron         atoms.     -   epi=about 1×1015 to about 6×1015 N-type atoms per cm3, for         example, Arsenic atoms,     -   where: 5×1014 to 1×1015 can be representative of a concentration         of epi bulk doping, and 5×1015 to 1×1016 can be representative         of a concentration at a surface region of the epi layer at about         2 um depth created by an additional epi implant step.         (Alternatively, 1×1015 to 6×1015).     -   N+=about 1×1020 N-type atoms per cm3, for example, phosphorous         atoms.     -   LN=about 1 to 2×1017 atoms per cm3, for example, phosphorous         atoms.     -   P-well=about 1×1016 P-type atoms per cm3, for example, boron         atoms.     -   PBL=about 1×1018 to about 2×1018 P-type atoms per cm3, for         example, boron atoms.     -   NBL=about 1×1019 to about 1.5×1019 N-type atoms per cm3, for         example, antimony atoms.     -   P+=about 3×1019 to about 5×1019 P-type atoms per cm3, for         example, boron atoms.

In some embodiments, the concentrations are outside of the above ranges or values, but can be within about +/− twenty percent of the above ranges or values.

It should be noted that reference is sometimes made herein to assemblies having a particular shape (e.g., rectangular or square). One of ordinary skill in the art will appreciate, however, that the techniques described herein are applicable to a variety of sizes and shapes.

Referring now to FIG. 1, an electronic circuit 100 includes a Hall effect element 118 and a temperature compensation circuit 120, both coupled to an amplifier 102.

Hall effect element 118 may have four terminals, 118 a-118 d. In an embodiment, a drive current 108 can be received by a first terminal 118 a of the Hall effect element 118. The drive current 108 can pass from the first terminal 118 a, through the Hall effect element 118, to a second terminal 118 b. A voltage reference, for example, ground 110, can be coupled to receive the drive current 108.

A third terminal 118 c can be coupled to a first input of amplifier 102 and a fourth terminal 118 d can be coupled to a second input of amplifier 102. For example, a differential output signal 114, 116 (e.g., a differential voltage) can be generated between the third terminal 118 c and fourth terminal 118 d, respectively, of Hall effect element 118. The differential output signal 114, 116 can be related to the drive current 108, an also related to a magnitude of an external magnetic field. The differential output signal 114, 116 can be provided to the amplifier 102 by the third terminal 118 c and fourth terminal 118 d, respectively, of Hall effect element 118.

Temperature compensation circuit 120 may have one or more outputs corresponding to a reference current or voltage. For example, and as illustrated in FIG. 1, temperature compensation circuit 120 has a first output 104 and second output 106. The first output 104 may be a multiplication reference current and the second output 106 may be a division reference current. The first output 104 may be coupled to and provide the multiplication reference current to the amplifier 120. The second output 106 may be coupled to and provide the division reference current to amplifier 102. Temperature compensation circuit 120 will be described in greater detail with respect to FIG. 6 below.

In an embodiment, amplifier 102 can apply the multiplication reference current and/or the division reference current to the differential output signal 114, 116 (e.g., sensitivity signal) to generate a compensated sensitivity signal having a different temperature coefficient than the differential output signal 114, 116 (e.g., sensitivity signal) received from Hall effect element 118.

In an embodiment, a sensitivity of the Hall effect element 118 (i.e., sensitivity of the differential output signal 114, 116) can be directly related to a value of the drive current 108. For example, the sensitivity of the Hall effect element 118 (i.e., sensitivity of the differential output signal 114, 116) can vary or change directly with temperature. The sensitivity of the Hall effect element 118 can also vary or change in a way related to stresses upon a substrate in which the Hall effect element 118 is disposed, which stresses may or may not be related to temperature.

Referring now to FIG. 2, an electronic circuit 200 includes an amplifier 210, a Hall effect element 218, a temperature compensation circuit 220 and an amplifier 202.

Amplifier 210 may be an operational amplifier and can be coupled to receive a reference voltage 212 at an inverting terminal. The amplifier 210 can generate a control signal 210 a and be coupled to a transistor 216 (e.g., field effect transistor) to provide the control signal 210 a. For example, a gate terminal of the transistor 216 may receive the control signal 210 a. A source of the transistor 216 can be coupled to receive a voltage 214. A drive current 216 a can be output from a drain terminal of the transistor 216.

Hall effect element 218 may have four terminals, 218 a-218 d. In an embodiment, drive current 216 a can be received by a first terminal 218 a of the Hall effect element 218. The drive current 216 a can pass from the first terminal 218 a, through the Hall effect element 218, to a second terminal 218 b. A voltage reference, for example, ground 230, can be coupled to receive the drive current 216 a. In some embodiments, a resistor 224 is provided. The resistor 224 may compensate for variations in the sensitivity of the Hall effect element 218 that occur due to stress of the substrate on which the electronic circuit 200 is disposed.

In an embodiment, a sensitivity of the Hall effect element 218 (i.e., sensitivity of the differential output signal 220, 222) can be directly related to a value of the drive current 216 a. For example, the sensitivity of the Hall effect element 218 (i.e., sensitivity of the differential output signal 220, 222) can vary or change directly with temperature. The sensitivity of the Hall effect element 218 can also vary or change in a way related to stresses upon a substrate in which the Hall effect element 218 is disposed, which stresses may or may not be related to temperature.

A third terminal 218 c can be coupled to a first input of amplifier 202 and a fourth terminal 218 d can be coupled to a second input of amplifier 202. For example, a differential output signal 220, 222 (e.g., a differential voltage) can be generated between the third terminal 218 c and fourth terminal 218 d, respectively, of Hall effect element 218. The differential output signal 220, 222 can be related to the drive current 216 a, an also related to a magnitude of an external magnetic field. The differential output signal 220, 222 can be provided to the amplifier 202 by the third terminal 218 c and fourth terminal 218 d, respectively, of Hall effect element 218.

Temperature compensation circuit 220 may have one or more outputs corresponding to a reference current or voltage. For example, and as illustrated in FIG. 2, temperature compensation circuit 220 has a first output 204 and second output 206. The first output 204 may be a multiplication reference current and the second output 206 may be a division reference current. The first output 204 may be coupled to and provide the multiplication reference current to the amplifier 202. The second output 106 may be coupled to and provide the division reference current to amplifier 120. Temperature compensation circuit 220 will be described in greater detail with respect to FIG. 6 below.

In an embodiment, amplifier 202 can apply the multiplication reference current and/or the division reference current to the differential output signal 220, 222 (e.g., sensitivity signal) to generate a compensated sensitivity signal having a different temperature coefficient than the differential output signal 220, 222 (e.g., sensitivity signal) received from Hall effect element 218.

In an embodiment, similar to Hall effect element 118, a sensitivity of the Hall effect element 218 (i.e., sensitivity of the differential output signal 220, 222) can be directly related to a value of the drive current 216 a. For example, the sensitivity of the Hall effect element 218 (i.e., sensitivity of the differential output signal 220, 222) can vary or change directly with temperature. The sensitivity of the Hall effect element 218 can also vary or change in a way related to stresses upon a substrate in which the Hall effect element 218 is disposed, which stresses may or may not be related to temperature. Thus, the input to amplifier 202 can have a large first and/or second order temperature coefficient, large enough to impact the operation of amplifier 202.

In an embodiment, resistor 224 may have a particular construction that and be appropriately sized such that a resistance of the resistor 224 changes with stress of the substrate by an amount that generally compensates for changes in the sensitivity of the Hall effect element 218 with regard to stress, essentially by changing the drive current 216 a as the stress changes. Thus, the input to amplifier 202 can be compensated to address the changes in the sensitivity of the Hall effect element 218. However, in some embodiments, further compensation may be needed to reduce a first and/or second order temperature coefficient of Hall effect element 218, as will be discussed in greater detail below with respect to FIGS. 3-7.

Referring now to FIG. 2A, an electronic circuit 250 is formed upon an epitaxial layer 255 over a substrate under the epitaxial layer 255. In an embodiment, an electronic circuit 250 may be the same as or substantially similar to electronic circuit 100 of FIG. 1, electronic circuit 200 of FIG. 2 and electronic circuit 300 of FIG. 3. In an embodiment, circuits described herein may be formed on or otherwise disposed on an epitaxial layer substantially similar to and with methods as those described in U.S. patent application Ser. No. 14/681,575, entitled “Electronic Circuit For Driving A Hall Effect Element With A Current Compensated For Substrate Stress,” filed on Apr. 8, 2015, assigned to the assignee of the subject application and incorporated herein by reference. For example, and as illustrated in FIG. 2A, Hall effect element 260 may be coupled to amplifier 202 and amplifier 202 may be coupled to temperature compensation circuit 220.

The electronic circuit 250 can include a Hall effect element 260, shown in part as a bounded portion 264 i of the epitaxial layer 255, bounded by an electrical barrier 265 to electron flow, the barrier defining a perimeter boundary of the Hall effect element 260. The electrical barrier 265 can be comprised of a PBL region under a P-well region.

The bounded portion 260 i can form a Hall plate of the Hall effect element 260. Over the bounded portion 260 can be a field plate, which, in some embodiments, can be formed in a metal layer. The field plate can have approximately the same dimensions in the x-y plane as the bounded portion 260 i, thus reference designator 260 i can be used to refer to either the Hall plate, i.e., bounded portion, in the epitaxial layer 255 or the field plate above the epitaxial layer 255.

The Hall effect 260 element can include four pickups 260 a, 260 b, 260 c, 260 d, which can be used and coupled in the same way, or in a similar way, as the four terminals 118 a, 118 b, 118 c, 118 d described above in conjunction with FIG. 1 of Hall effect element 118, four terminals 218 a, 218 b, 218 c, 218 d described above in conjunction with FIG. 2 of Hall effect element 218 and four terminals 318 a, 318 b, 318 c, 318 d described below in conjunction with FIG. 3 of Hall effect element 318. In an embodiment, the four pickups 260 a, 260 b, 260 c, 260 b can be a corresponding four contacts (not shown) formed in a metal layer.

The bounded portion 260 i of the Hall effect element 260 can, in some embodiments, form a square shape having four sides or edges 260 e, 260 f, 260 g, 260 g. However, in other embodiments, the bounded portion 260 i (and the Hall plate and field plate) need not have a square shape. For example, a Hall element with a wide cross shape is described I U.S. Pat. No. 8,357,983, issued Jan. 22, 2013, which is assigned to the assignee of the present invention and which is incorporated by reference herein in its entirety.

It should be understood that the Hall effect element 260 can be a horizontal or planar Hall effect element, which can have an axis of maximum sensitivity parallel to a z-axis.

The electronic circuit 250 can also include a resistor 270, which can be the same as or similar to the resistor 224 of FIG. 2 and the resistor 316 of FIG. 3.

The resistor 270 can include an NBL region 274, a P-well region 281, a barrier region 280, and two pickups 276, 278. The NBL region 274 can have a length with a length dimension parallel to the x-axis and a width with a width dimension parallel to the y-axis. The length dimension of the NBL region 274 can be parallel to the edge 260 f of the Hall effect element 260. However, in other embodiments, the length dimension is not parallel to an edge of the Hall effect element 260. While the width dimension of the NBL region 264 is shown to be less than the length dimension, in other embodiments, the width dimension can be equal to or greater than the length dimension.

Referring now to FIG. 3, an electronic circuit 300 includes a current generator 320, a current mirror 330, a Hall effect element 318, a temperature compensation circuit 320 and an amplifier 302.

Current generator 320 can include an amplifier 310 (e.g., operational amplifier). Amplifier 310 can be coupled to receive a reference voltage 312 at a noninverting terminal. Amplifier 310 can generate a control signal 310 a and be coupled to a transistor 314 (e.g., N-channel FET).

A source of transistor 314 can be coupled to an inverting terminal of the amplifier 310 and also coupled to a first end of a resistor 316. The other end of the resistor 316 can be coupled to a voltage reference, for example, a ground 340.

In an embodiment, current generator 320 is operable to generate a reference current 314 a that passes through the resistor 316, and also through transistor 314. For example, reference current 314 a may be provided to into the drain of transistor 314. The reference current 314 a can be generated in accordance with a reference voltage generated across the resistor 316 due to a feedback arrangement around the amplifier 310. In an embodiment, the current generator 320 may use the operation amplifier 104 to achieve the reference voltage across the resistor 316 by way of feedback, however, it should be appreciated that there are other ways to achieve the reference voltage across the resistor 316 without using an amplifier.

A drain of transistor 314 can be coupled to the current mirror 330. Current mirror 330 may include a first transistor 334 and a second transistor 336. A drain of the first transistor 334 (e.g., P-Channel FET) can be coupled to the drain of transistor 314 of current generator 320. A gate of current mirror 330 can be coupled to the drain of first transistor 334 forming a diode structure.

The gate of the first transistor 334 can be coupled to a gate of the second transistor 336. A source of the first transistor 334 can be coupled to a source of the second transistor 336, which can both be coupled to receive the voltage 332. A drain of the second transistor 336 can supply a drive current 336 a.

In some embodiments, the drive current 336 a has the same current value as the reference current 314 a. However, it will be understood that, by scaling relative physical sizes of the first and second transistors 334, 336, the drive current 336 a can be greater than or less than the reference current 314 a.

Hall effect element 318 may have four terminals, 318 a-318 d. In an embodiment, drive current 336 a can be received by a first terminal 318 a of the Hall effect element 318. The drive current 336 a can pass from the first terminal 318 a, through the Hall effect element 318, to a second terminal 318 b. A voltage reference, for example, ground 340, can be coupled to receive the drive current 336 a.

A third terminal 318 c can be coupled to a first input of amplifier 302 and a fourth terminal 318 d can be coupled to a second input of amplifier 302. For example, a differential output signal 342, 344 (e.g., a differential voltage) can be generated between the third terminal 318 c and fourth terminal 318 d, respectively, of Hall effect element 318. The differential output signal 342, 344 can be related to the drive current 336 a, an also related to a magnitude of an external magnetic field. The differential output signal 342, 344 can be provided to the amplifier 302 by the third terminal 318 c and fourth terminal 318 d, respectively, of Hall effect element 318.

In an embodiment, a sensitivity of the Hall effect element 318 (i.e., sensitivity of the differential output signal 342, 344) can be directly related to a value of the drive current 336 a. For example, the sensitivity of the Hall effect element 318 (i.e., sensitivity of the differential output signal 342, 344) can vary or change directly with temperature. The sensitivity of the Hall effect element 318 can also vary or change in a way related to stresses upon a substrate in which the Hall effect element 318 is disposed, which stresses may or may not be related to temperature.

Temperature compensation circuit 320 may have one or more outputs corresponding to a reference current or voltage. For example, and as illustrated in FIG. 3, temperature compensation circuit 320 has a first output 304 and second output 306. The first output 304 may be a multiplication reference current and the second output 306 may be a division reference current. The first output 304 may be coupled to and provide the multiplication reference current to the amplifier 302. The second output 306 may be coupled to and provide the division reference current to amplifier 320. Temperature compensation circuit 320 will be described in greater detail with respect to FIG. 6 below.

In an embodiment, amplifier 302 can apply the multiplication reference current and/or the division reference current to the differential output signal 342, 344 (e.g., sensitivity signal) to generate a compensated sensitivity signal having a different temperature coefficient than the differential output signal 342, 344 (e.g., sensitivity signal) received from Hall effect element 318.

In an embodiment, a sensitivity of the Hall effect element 318 (i.e., sensitivity of the differential output signal 342, 344) can be directly related to a value of the drive current 336 a. For example, the sensitivity of the Hall effect element 318 (i.e., sensitivity of the differential output signal 342, 344) can vary or change directly with temperature. The sensitivity of the Hall effect element 118 can also vary or change in a way related to stresses upon a substrate in which the Hall effect element 318 is disposed, which stresses may or may not be related to temperature. Thus, the input to amplifier 302 can have a large first and/or second order temperature coefficient, large enough to impact the operation of amplifier 302.

In an embodiment, the resistor 316 can have a particular construction that makes a resistance of the resistor 316 change with stress of the substrate by an amount that generally compensates for changes in the sensitivity of the Hall effect element 318 with regard to stress, essentially by changing the drive current 336 a as the stress changes. Changes in resistance of the resistor 316 result in changes in the reference current 314 a, which result in changes of the drive current. Thus, the input to amplifier 302 can be compensated to address the changes in the sensitivity of the Hall effect element 318.

However, in some embodiments, the use of resistor 316 may result in a Hall plate sensitivity having a strong negative sensitivity temperature coefficient. Thus, further compensation may be needed. For example, to reduce a first and/or second order temperature coefficient of the Hall effect element 318. For example, and referring to FIG. 4, a plot 400 of the resulting sensitivity of Hall effect element is provided.

In plot 400, each of the y-axis and x-axis correspond to normalized sensitivity values with respect to a change in temperature. In an embodiment, plot 400 may represent a plot of the sensitivity of Hall effect element 118 described above with respect to FIG. 1, Hall effect element 218 described above with respect to FIG. 2, or Hall effect element 318 described above with respect to FIG. 3.

As illustrated in plot 400, the sensitivity of the Hall effect element has a negative first order temperature coefficient and a positive second order temperature coefficient. In some embodiments, to compensate for the large negative first order temperature coefficient, the Hall plate sensitivity can be multiplied by a reference voltage having a temperature coefficient different than zero (e.g., voltage temperature coefficient numerator (VTCN)). For example, a Hall plate sensitivity may be defined as HPSens and a first reference voltage may be VTCN. Thus, a compensated Hall plate sensitivity, CompensatedHPSens, may be defined by the following equations. CompensatedHPSens=HPSens.*VTCN  Equation 1 CompensatedHPSens=HPSens.*(aT+b)  Equation 2

where aT+b represents a first order function, where a and b represent coefficient values and T represents a temperature value. Thus, the Hall plate sensitivity can be multiplied by a reference voltage having a temperature coefficient different than zero and using a first order function to reduce a first order temperature coefficient of the Hall plate sensitivity.

For example, and now referring to FIG. 5, a plot 500 of a sensitivity of Hall effect element that has been compensated by multiplying the Hall plate sensitivity by a reference voltage (e.g., VTCN) is provided. In an embodiment, plot 500 may represent a plot of the sensitivity of Hall effect element 118 described above with respect to FIG. 1, Hall effect element 218 described above with respect to FIG. 2, or Hall effect element 318 described above with respect to FIG. 3, when compensated by multiplying their respective Hall plate sensitivity by a reference voltage (e.g., VTCN).

As illustrated in plot 500, the resulting sensitivity has a smaller first order temperature coefficient. However, in some embodiments, there may be a noticeable negative second order coefficient. For example, if the Hall plate sensitivity is defined as: HPSens=pT ² −qT+r  Equation 3

where pT² represents a second order coefficient and qT represents a first order temperature coefficient, with T as a temperature value. Then, using equations 1 and 2 from above, we get a compensated Hall plate sensitivity defined as follows: CompensatedHPSens=HPSens.*VTCN  Equation 4 CompensatedHPSens=(pT ² −qT+r)*(aT+b)  Equation 5 CompensatedHPSens=paT ³+(pb−qa)T ²+(qb+ra)T+r+b  Equation 6

where paT³ represents a third order coefficient, (pb−qa)T² represents a second order coefficient and (qb+ra)T represents a first order temperature coefficient, with T as a temperature value. Thus, the term qa>>pb defines the negative second order coefficient.

In an embodiment, to reduce the negative second order coefficient, a second reference voltage may be generated to produce higher order coefficients. The sensitivity can be divided by the second reference voltage (e.g., voltage temperature coefficient denominator (VTCD)) with a first order temperature coefficient. For example, the Taylor expansion, provided below, shows that higher order numerator coefficients are generated.

$\begin{matrix} {\frac{1}{{cT} + d} = {\alpha + {\beta\; T} + {\gamma\; T^{2}} + {\delta\; T^{3}} + {ɛ\; T^{4}} + {\zeta\; T^{5}}}} & {{Equation}\mspace{14mu} 7} \end{matrix}$

In an embodiment, by carefully selecting the denominator terms, the second order sensitivity coefficient can be greatly reduced. The systems and methods described herein may use two reference voltages (VTCN, VTCD). Their coefficients can be selected such that they reduce the Hall plate sensitivity variation with temperature. Thus, a new compensated Hall plate sensitivity (NewCompensatedHPSens) may be defined as follows: VTCN=aT+b(numerator term)  Equation 8 VTCD=−cT+d(denominator term)  Equation 9 NewCompensatedHPSens=HPSens(aT+b)/(−cT+d)  Equation 10

where, VTCN=aT+b represents a first reference voltage and VTCD=−cT+d represents a second reference voltage. In an embodiment, the reference voltages, VTCN and VTCD, can be converted into currents and provided into a front end amplifier's Gilbert cell to generate a multiplication (VTCN) and division (VTCD) with a Hall plate sensitivity signal.

In an embodiment, the reference voltages may be applied to a resistor in each of the circuits described above with respect to FIGS. 1-3, (e.g., resistor 224 of FIG. 2, resistor 316 of FIG. 3) to reduce a first and/or second order temperature coefficient of a Hall effect element (e.g., Hall effect element 118 of FIG. 1, Hall effect element 218 of FIG. 2, Hall effect element 318 of FIG. 3). The reference voltage applied to the resistor may generate a current that bias the Hall effect element. In an embodiment, the reference voltages may be generated by a temperature coefficient circuit (e.g., temperature coefficient circuit 120 of FIG. 1, temperature coefficient circuit 220 of FIG. 2, temperature coefficient circuit 320 of FIG. 3 and temperature coefficient circuit 600 of FIG. 6). The temperature coefficient circuit may convert the voltages into currents (e.g., I_(mul) and I_(div)) and provide the currents to an input of an amplifier (e.g., amplifier 102 of FIG. 1, amplifier 202 of FIG. 2 and amplifier 302 of FIG. 3).

Now referring to FIG. 6, a temperate coefficient circuit 600 includes a first amplifier 614, a second amplifier 616, a multiplexer (MUX) 624, a first voltage/current (V/I) converter 634 and a second V/I converter 636.

First amplifier 614 can be coupled to receive a first reference voltage 602 at a noninverting terminal. In some embodiments, the reference voltage 602 may be a voltage proportional to absolute temperature (PTAT). First amplifier 614 can generate a first amplifier output 614 a. An inverting terminal of first amplifier 614 can be coupled to the first amplifier output 614 a (e.g., negative feedback loop). In some embodiments, first amplifier 614 may be an inverting operational amplifier.

Second amplifier 616 can be coupled to receive a second reference voltage 604 at a noninverting terminal. In some embodiments, the second reference voltage 604 may be a voltage complementary to absolute temperature (VCTAT). Second amplifier 616 can generate a second amplifier output 616 a. An inverting terminal of second amplifier 616 can be coupled to the second amplifier output 616 a (e.g., negative feedback loop). In some embodiments, second amplifier 616 may be an inverting operational amplifier.

First amplifier output 614 a may be coupled to second amplifier output 616 a through a series of resistors (R₁-R_(N)) 618 a-618 n. The series of resistors 618 a-618 n may generate different voltages along a signal path 617 between first amplifier output 614 a and second amplifier output 616 a. For example, a voltage at a point on the signal path 617 between a first two resistors may be different from a voltage at a point on the signal path 617 between a second two resistors. In an embodiment, the series of resistors 618 a-618 n may include at least two or more resistors.

In an embodiment, a plurality of resistors taps 620 a-620 n may couple signal path 617 to a plurality of inputs of a multiplexer 624. The plurality of resistor taps 620 a-620 n provide voltages from the signal path 617 between first amplifier output 614 a and second amplifier output 616 a to the multiplexer 624. The voltage provided from any of the plurality of resistor taps 620 a-620 n may depend on a location the respective resistor tap couples to the signal path 617. For example, the voltage may depend on the number of resistors in the series of resistors 618 a-618 n and a location each of the respective resistor taps couple between the series of resistors 618 a-618 n. Thus, in an embodiment, a location of one or more of the plurality of resistor tap 620 a-620 n may depend on a desired voltage to be provided to the inputs of the multiplexer 624. In an embodiment, the number of resistor taps 620 a-620 n and inputs to the multiplexer 624 may vary based on a particular application of temperate coefficient circuit 600.

In some embodiments, multiplexer 624 may include more multiple multiplexers. For example, multiplexer 624 may include a first multiplexer having one or more input nodes coupled to the series of resistors 618 a-618 n and a second multiplexer having one or more inputs coupled to the series of resistors 618 a-618 n. In an embodiment, the first multiplexer may receive one or more voltages from the series of resistors 618 a-618 n and generate the multiplication reference voltage and the second multiplexer may receive one or more voltages from the series of resistors 618 a-618 n and generate the division reference voltage.

Multiplexer 624 may receive a voltage from one or more of the plurality of resistor taps 620 a-620 n. Multiplexer 624 may generate two outputs, a first multiplexer output 626 and a second multiplexer output 628. An input of first V/I converter 634 is coupled to first multiplexer output 626. An input of second V/I converter 636 is coupled to second multiplexer output 628.

In some embodiments, temperature coefficient circuit 600 may not include multiplexer 624. For example, a first resistor tap of the plurality of resistor taps 620 a-620 n may couple directly to an input of first V/I converter 634 and second resistor tap of the plurality of resistor taps 620 a-620 n may be coupled directly to an input of second V/I converter 636.

First V/I converter 634 may generate a first V/I converter output 638 and second V/I converter 636 may generate a second V/I converter output 640. In an embodiment, the first and second V/I converter outputs 638, 640 may be provided to amplifier.

In operation, first amplifier 614 may receive the first reference voltage 602 generated in conjunction with a proportional to absolute temperature (PTAT) device. The first reference voltage 602 may have a predetermined non-zero sensitivity to temperature. Thus, the first reference voltage 602 may be sensitive to changes in temperature and vary based on the change in temperature. Second amplifier 616 may receive the second reference voltage 604 (e.g., VCTAT). The second reference voltage 604 may be generated in conjunction with a complementary to absolute temperature (CTAT) device. In an embodiment, the second reference voltage (CTAT) may have an opposite temperature coefficient with respect to the first reference voltage (PTAT).

First amplifier 614 may generate first amplifier output 614 a and be coupled to signal path 617 to provide the first amplifier output 614 a to a first end of the series of resistors 618 a-618 n. Second amplifier 616 may generate second amplifier output 616 a and be coupled to signal path 617 to provide the second amplifier output 616 a to a second end of the series of resistors 618 a-618 n.

The plurality of resistor taps 620 a-620 n may be coupled to the signal path 617 to receive (e.g., tap) a voltage at specific points along the series of resistors 618 a-618 n. The plurality of resistor taps 620 a-620 n may one or more voltages to input nodes of multiplexer 624.

Multiplexer 624 may receive one or more voltages from the plurality of resistor taps 620 a-620 n and generate a multiplication reference voltage related to a multiplication factor, a division reference voltage related to a division divisor, or both. In some embodiments, multiplexer 624 may perform calibration on the one or more voltages received from the plurality of resistor taps 620 a-620 n.

In an embodiment, calibration may not be needed, thus temperature coefficient circuit 600 may not include multiplexer 624. For example, a first resistor tap of the plurality of resistor taps 620 a-620 n may provide a multiplication reference voltage to an input of first V/I converter 634 and a second resistor tap of the plurality of resistor taps 620 a-620 n may provide a division reference voltage to an input of second V/I converter 636.

In an embodiment, an input of first V/I converter 634 may be coupled to an output of multiplexer 624 to receive the multiplication reference voltage and an input of second V/I converter 636 may be coupled to an output of multiplexer 624 to receive the division reference voltage. In some embodiments, a buffer (e.g., inverter buffer) may be provided between second multiplexer output 628 and the input of second V/I converter 636 to convert the division reference voltage to a negative voltage. Thus, the second V/I converter 636 may receive a negative division reference voltage.

First V/I converter 634 may generate the first V/I converter output 638. In an embodiment, first V/I converter output 638 may be a current, I_(mul), also referred to herein as a multiplication reference current. Second V/I converter 636 may generate a second V/I converter output 640. In an embodiment, second V/I converter output 640 may be a current, I_(div), also referred to herein as a division reference current.

In an embodiment, temperate coefficient circuit 600 may the same as or substantially similar to temperate coefficient circuit 120 of FIG. 1, temperate coefficient circuit 220 of FIG. 2 and temperate coefficient circuit 320 of FIG. 3. In operation, temperature coefficient circuit 600 may generate two reference voltages and convert them into currents, I_(mul) and I_(div), and provide them to an input of an amplifier (e.g., amplifier 102 of FIG. 1, amplifier 202 of FIG. 2 and amplifier 302 of FIG. 3). For example, in one embodiment, currents, I_(mul) and I_(div), may be provided to a front end amplifier's Gilbert cell to generate multiplication (VTCN) and division (VTCD) with a Hall plate sensitivity signal to reduce a first and/or second order Hall plate sensitivity temperature coefficient.

For example and now referring to FIG. 7, a plot 700 of a sensitivity of Hall effect element that has been compensated by multiplying the Hall plate sensitivity by a first reference voltage (e.g., VTCN) and dividing the Hall plate sensitivity by a second reference voltage (e.g., VTCD) is compared to the plot 500 from FIG. 5, of a Hall effect element that has only been compensated by multiplying the Hall plate sensitivity by a first reference voltage (e.g., VTCN). As illustrated in FIG. 7, the variation of sensitivity with respect to temperature (e.g., variation in change of the plot 700) has been greatly reduced in comparison to plot 500 (or plot 400 of FIG. 4). Thus, by selecting appropriate numerator terms (VTCN), a first order temperature coefficient can be reduced and by selecting appropriate denominator terms (VTCD), second order temperature coefficient can be reduced.

In an embodiment, plot 700 may represent a plot of the sensitivity of Hall effect element 118 described above with respect to FIG. 1, Hall effect element 218 described above with respect to FIG. 2, or Hall effect element 318 described above with respect to FIG. 3, when compensated by multiplying their respective Hall plate sensitivity by a reference voltage (e.g., VTCN).

While the concepts, systems and techniques sought to be protected have been particularly shown and described with references to illustrated embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the concepts as defined by the appended claims. For instance, the apparatus described herein is applicable from low RF frequencies to high microwave frequencies. Further, the concepts, systems and techniques described herein are applicable to installation on towers, in buildings, and on vehicles such as ground moving vehicles, airborne vehicles, and satellites. Further, the concepts, systems and techniques described herein are applicable to handheld or backpack antenna applications for search and rescue.

Elements of different embodiments described herein may be combined to form other embodiments not specifically set forth above. Other embodiments not specifically described herein are also within the scope of the following claims. 

What is claimed is:
 1. A circuit comprising: a semiconductor substrate; an epitaxial layer disposed over a surface of the semiconductor substrate; a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer disposed over the surface of the semiconductor substrate; a current generator configured to generate a drive current that passes through the Hall effect element, wherein the current generator comprises: a first resistor for receiving a reference voltage resulting in a reference current passing through the first resistor, the reference current related to the drive current, the first resistor disposed in the epitaxial layer, wherein a resistance of the first resistor, the reference current, and the drive current change in accordance with changes of a stress in the semiconductor substrate, wherein the first resistor comprises: first and second pickups implanted upon and diffused into a first surface of the epitaxial layer; and a first buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups, wherein the first buried structure has a density of atoms that results in a first low resistance path with a first resistance lower than a resistance of the epitaxial layer, wherein the reference current passes from the first pickup, through a first region of the epitaxial layer, through the first buried structure, and through a second region of the epitaxial layer to the second pickup, wherein the circuit further comprises: an amplifier coupled to the Hall effect element, the amplifier to receive a sensitivity signal from Hall effect element, the sensitivity signal having a first temperature coefficient, the amplifier to generate a compensated sensitivity signal, the compensated sensitivity signal having a second temperature coefficient; and a temperature compensation circuit coupled to the amplifier, the temperature compensation circuit to generate a multiplication reference current and provide the multiplication reference current to the amplifier; wherein the amplifier applies the multiplication reference current to the amplifier to generate the compensated sensitivity signal with the second temperature coefficient smaller than the first temperature coefficient of the sensitivity signal.
 2. The circuit of claim 1, wherein the first resistor comprises a vertical epitaxial resistor.
 3. The circuit of claim 1, wherein the first temperature coefficient comprises a 1^(st) order temperature coefficient, a 2^(nd) order temperature coefficient, or both.
 4. The circuit of claim 1, wherein the amplifier comprises a front end amplifier comprised of a Gilbert cell, wherein the Gilbert cell is coupled to receive the multiplication reference current to apply a multiplication factor to the amplifier.
 5. The circuit of claim 4, wherein the Hall effect element comprises a horizontal Hall effect element.
 6. The circuit of claim 5, wherein the first resistor is coupled to a second amplifier to form a current source or a current sink.
 7. The circuit of claim 6, further comprising a current mirror coupled to the second amplifier, wherein the current mirror comprises a reference leg though which the reference current passes, and a drive leg through which the drive current passes, wherein the drive current passing through the Hall effect element passes between a higher voltage terminal of the Hall effect element and a lower voltage terminal of the Hall effect element.
 8. The circuit of claim 7, wherein the drive leg of the current mirror is coupled to the higher voltage terminal.
 9. The circuit of claim 7, wherein the drive leg of the current mirror is coupled to the lower voltage terminal.
 10. The circuit of claim 1, wherein the current generator further comprises: a second resistor coupled in series or in parallel with the first resistor, the second resistor disposed in the epitaxial layer, wherein the second resistor comprises: third and fourth pickups implanted upon and diffused into the first surface of the epitaxial layer; and a second buried structure disposed under the first surface of the epitaxial layer and under the third and fourth pickups, wherein the second buried structure has the density of atoms that results in a second low resistance path with a second resistance lower than the resistance of the epitaxial layer, wherein at least a portion of the reference current passes from the third pickup, through a third region of the epitaxial layer, through the second buried structure, and through a fourth region of the epitaxial layer to the fourth pickup.
 11. The electronic circuit of claim 10, wherein a first length dimension of the first buried structure is disposed parallel to a first edge of the Hall effect element and proximate to the Hall effect element, and wherein a second length dimension of the second buried structure is disposed parallel to a second edge of the Hall effect element and proximate to the Hall effect element, wherein the second length dimension of the second buried structure is arranged perpendicular to the first length dimension of the first buried structure.
 12. A circuit comprising: a semiconductor substrate; an epitaxial layer disposed over a surface of the semiconductor substrate; a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer disposed over the surface of the semiconductor substrate; a current generator configured to generate a drive current that passes through the Hall effect element, wherein the current generator comprises: a first resistor for receiving a reference voltage resulting in a reference current passing through the first resistor, the reference current related to the drive current, the first resistor disposed in the epitaxial layer, wherein a resistance of the first resistor, the reference current, and the drive current change in accordance with changes of a stress in the semiconductor substrate, wherein the first resistor comprises: first and second pickups implanted upon and diffused into a first surface of the epitaxial layer; and a first buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups, wherein the first buried structure has a density of atoms that results in a first low resistance path with a first resistance lower than a resistance of the epitaxial layer, wherein the reference current passes from the first pickup, through a first region of the epitaxial layer, through the first buried structure, and through a second region of the epitaxial layer to the second pickup, wherein the circuit further comprises: an amplifier coupled to the Hall effect element, the amplifier to receive a sensitivity signal from Hall effect element, the sensitivity signal having a first temperature coefficient, the amplifier to generate a compensated sensitivity signal, the compensated sensitivity signal having a second temperature coefficient; and a temperature compensation circuit coupled to the amplifier, the temperature compensation circuit to generate a multiplication reference current and a division reference current and provide the multiplication reference current and the division reference current to the amplifier; wherein the amplifier applies the multiplication reference current and the division reference current to the amplifier to generate the compensated sensitivity signal with the second temperature coefficient smaller than the first temperature coefficient of the sensitivity signal.
 13. The circuit of claim 12, wherein the first resistor comprises a vertical epitaxial resistor.
 14. The circuit of claim 12, wherein the first portion of the temperature coefficient comprises a 1^(st) order temperature coefficient of the Hall effect element and the second portion of the temperature coefficient is a 2^(nd) order temperature coefficient of the Hall effect element.
 15. The circuit of claim 12, wherein the amplifier comprises a front end amplifier comprised of a Gilbert cell, wherein the Gilbert cell is coupled to receive the multiplication reference current to apply a multiplication factor to the amplifier.
 16. The circuit of claim 15, wherein the Hall effect element comprises a horizontal Hall effect element.
 17. The circuit of claim 16, wherein the first resistor is coupled to a second amplifier to form a current source or a current sink.
 18. The circuit of claim 17, further comprising a current mirror coupled to the second amplifier, wherein the current mirror comprises a reference leg though which the reference current passes, and a drive leg through which the drive current passes, wherein the drive current passing through the Hall effect element passes between a higher voltage terminal of the Hall effect element and a lower voltage terminal of the Hall effect element.
 19. The circuit of claim 18, wherein the drive leg of the current mirror is coupled to the higher voltage terminal.
 20. The circuit of claim 18, wherein the drive leg of the current mirror is coupled to the lower voltage terminal.
 21. The circuit of claim 12, wherein the current generator further comprises: a second resistor coupled in series or in parallel with the first resistor, the second resistor disposed in the epitaxial layer, wherein the second resistor comprises: third and fourth pickups implanted upon and diffused into the first surface of the epitaxial layer; and a second buried structure disposed under the first surface of the epitaxial layer and under the third and fourth pickups, wherein the second buried structure has the density of atoms that results in a second low resistance path with a second resistance lower than the resistance of the epitaxial layer, wherein at least a portion of the reference current passes from the third pickup, through a third region of the epitaxial layer, through the second buried structure, and through a fourth region of the epitaxial layer to the fourth pickup. 